Nanostructured CuInSe2 by electrodeposition with the assistance of porous silicon templates

被引：2

作者：

De La Luz-Merino, Samuel ^{[1
]}

Estela Calixto, Ma. ^{[1
]}

Mendez-Blas, Antonio ^{[1
]}

机构：

[1] Benemerita Univ Autonoma Puebla, Inst Fis, Puebla 72570, Mexico

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2015年 / 163卷

关键词：

Inorganic compounds; Nanostructures; Semiconductors; Electrochemical techniques; Optical properties; COPPER INDIUM DISELENIDE; THIN-FILMS; RAMAN-SCATTERING; NANOPARTICLES; DEPENDENCE; SURFACE; WIRES;

D O I：

10.1016/j.matchemphys.2015.07.051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, the results of the electrodeposition and characterization of CuInSe2 nanowires with the assistance of porous silicon (PSi) templates are presented. Work was done first to obtain the appropriated conditions to prepare porous silicon layers with 70% of porosity, a pore diameter with average size 20 30 nm and thicknesses close to 2.5;Am by electrochemical etching of p-type (100) c-Si wafers. Then, PS layers were peeled-off from the c-Si wafer and transferred to glass/TCO substrates to fabricate the new glass/TCO/PS template substrates. Afterward, the electrodeposition of CuInSe2 into the PS templates was carried out using an acidic aqueous buffered bath that contained the three active ionic species. The deposition conditions to obtain nanostructured CuInSe2 on the PS templates were established after performing a systematic study of deposition parameters. SEM images, EDS and Raman results showed that nanostructured CuInSe2 was formed into porous silicon templates; the infiltration was verified using the Fast Fourier Transform of optical reflectance response for the samples before and after the CuInSe2 infiltration. (C) 2015 Elsevier S.V. All rights reserved.

引用

页码：362 / 368

页数：7

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