A 77 GHz Power Amplifier for Low Cost Radar Transmitters in a 55-nm CMOS Technology

被引：1

作者：

Viet-Hoang Le ^{[1
]}

Quang-Diep Bui ^{[1
]}

Luo, Haifeng ^{[1
]}

Li, Shenghao ^{[1
]}

Xuan, Yuan ^{[1
]}

Oi, Yinwan ^{[1
]}

Zhang, Fan ^{[1
]}

机构：

[1] Andar Technol PTY LTD, Melbourne, Vic, Australia

来源：

2021 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2021年

关键词：

Automotive radar; 55-nm CMOS; low power; mm-wave sensor; PA; transformer-based;

D O I：

10.1109/APMC52720.2021.9661619

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 77 GHz power amplifier (PA) fabricated in a low cost, low power 55-nm CMOS process for mm-wave radar transmitters is presented. The PA design is based on transformer-coupled topology to achieve compact size and high efficiency. The fabricated PA has a 26.5 dB peak gain with 3 dB gain bandwidth of 9 GHz (72-81 GHz). The PA has more than +11 dBm saturated output power (Psat) within the frequency range of 76-81GHz, with maximum Psat of +12 dBm at 78 GHz. From a 1.2 V supply, the PA achieved maximum power added efficiency (PAE) of 14%. Return losses at the input and output ports are less than -10 dB across the 70-90 GHz band. The fabricated PA occupies a compact size of 0.146 mm(2) silicon die.

引用

页码：43 / 45

页数：3

共 7 条

[1]

Chang TY, 2010, IEEE CUST INTEGR CIR

[2] A 26.4-dB Gain 15.82-dBm 77-GHz CMOS Power Amplifier With 15.9%; PAE Using Transformer-Based Quadrature Coupler Network [J].