Calculation of the surface characteristics and pressures of InAs quantum dots in a GaAs matrix

被引：2
作者：
Guba, S. K. [1 ]
Yuzevich, V. N. [1 ,2 ]
机构：
[1] Lviv Polytech Natl Univ Lvivska Politekh, UA-79013 Lvov, Ukraine
[2] Natl Acad Sci Ukraine, Karpenko Physicochem Inst, UA-79060 Lvov, Ukraine
来源：
SEMICONDUCTORS | 2014年 / 48卷 / 07期
关键词：
STRAINED ISLANDS; HETEROSTRUCTURES; SEMICONDUCTORS; RELAXATION; STRESSES; ENERGY;
D O I：
10.1134/S1063782614070082
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A theoretical model for calculating the energy characteristics of surfaces of InAs quantum dots in a GaAs(100) matrix is described. The model is based on notions of nonequilibrium thermodynamics and surface physics. The results of calculating the magnitudes of the surface energy and adhesion physical quantities as well as pressures in the vicinity of the edges of InAs quantum dots in a GaAs(100) matrix are presented. The causes of bending of the profile of the lower part of the quantum dot are presented using the Young relationship. These results can be used to asses the stress-relaxation mechanisms during the course of the selforganization of InAs quantum dots in a GaAs(100) matrix.
引用
收藏
页码：905 / 910
页数：6
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