Pressure dependence of the photoluminescence from γ-In2Se3 thin films prepared using MOCVD with a single-source precursor

被引:5
|
作者
Choi, In Hwan [1 ]
Park, Hyeon Jeong [1 ]
机构
[1] Chung Ang Univ, Dept Phys, Seoul 156756, South Korea
关键词
gamma-In2Se3; Pressure dependence; MOCVD; Single source precursor; (Me)(2)In(mu-SeMe)](2); CHEMICAL-VAPOR-DEPOSITION; HYDROSTATIC-PRESSURE; GROWTH;
D O I
10.3938/jkps.64.1351
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Single gamma-phase In2Se3 films were prepared by using metal-organic chemical-vapor deposition(MOCVD) with a single-source precursor [(Me)(2)In(mu-SeMe)](2). The basic physical properties of the grown films were examined by using X-ray diffraction, Raman spectroscopy, and photoluminescence spectroscopy at room temperature. The pressure dependence of the photoluminescence spectrum of the In2Se3 films was measured at room temperature. At 1 atm, 2 PL peaks were observed, one at 1.88 eV due to a bound exciton transition and the other at 1.50 eV due to a bound-to-free transition. While the pressure coefficients, at pressures below 1.4 GPa were nearly zero, the pressure coefficients of both PL peaks at pressures above 1.4 GPa were -25 meV/GPa.
引用
收藏
页码:1351 / 1355
页数:5
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