Exchange interactions and Curie temperatures in diluted magnetic semiconductor

被引：9
作者：
Sato, K
Dederichs, PH
Katayama-Yoshida, H
Kudrnovsky, J
机构：
[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[2] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
[3] Acad Sci Czech Republ, Inst Phys, CZ-18221 Prague 8, Czech Republic
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷
关键词：
diluted magnetic semiconductor; Curie temperature; double exchange interaction; p-d exchange interaction;
D O I：
10.1016/j.jmmm.2003.12.784
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Curie temperatures (T-C) for Mn-doped GaN, GaP, GaAs and GaSb are calculated from first-principles by using a mapping on the Heisenberg model in the mean field approximation. Analysing concentration dependences of T-C as a function of the Mn concentration c, exchange interactions in diluted magnetic semiconductors are discussed. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：1983 / 1984
页数：2
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