Growth of ZnO by cold-wall chemical vapor transport

被引：3

作者：

Abe, Koji ^{[1
]}

Banno, Yuta ^{[1
]}

Sasayama, Tomonari ^{[1
]}

Koizumi, Kazuya ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Elect & Elect Engn, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 03期

关键词：

carrier density; crystal growth from vapour; crystal structure; gallium; Hall effect; II-VI semiconductors; semiconductor growth; wide band gap semiconductors; zinc compounds; OXIDE;

D O I：

10.1116/1.3089374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Undoped and Ga-doped ZnO crystals were grown on Zn-polar ZnO substrates by cold-wall chemical vapor transport (CVT). High growth rates exceeding 100 mu m/h have been achieved. X-ray rocking curve and Hall effect measurements revealed that CO(2) in the reaction tube of the cold-wall CVT system improves the structural and electrical properties of ZnO crystals. Ga-doped ZnO crystals were grown by using ZnO powder mixed with Ga(2)O(3) powder as a source material. The carrier concentration depends on the Ga(2)O(3) content of the source material and is controlled between 7x10(16) and 3x10(19) cm(-3).

引用

页码：1652 / 1654

页数：3

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