Nano-floating gate capacitor with SnO2 quantum dots distributed in polyimide dielectrics

被引：4

作者：

Lee, Dong Uk ^{[1
,2
]}

Seo, Ki Bong ^{[1
,2
]}

Han, Seung Jong ^{[1
,2
]}

Kim, Eun Kyu ^{[1
,2
]}

Kim, Young-Ho ^{[3
]}

机构：

[1] Hanyang Univ, Quantum Funct Spin Lab, Seoul 133791, South Korea

[2] Hanyang Univ, Dept Phys, Seoul 133791, South Korea

[3] Hanyang Univ, Dept Mat Engn, Seoul 133791, South Korea

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 04期

关键词：

NANOBELTS; NANOWIRES; MEMORY; OXIDE;

D O I：

10.1002/pssb.200880617

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Self assembled SnO2 quantum dots were fabricated by a chemical process between a BPDA PDA polyamic acid and a Sn film. A nano-floating gate capacitor having metal insulator semiconductor structure has been formed on p-type Si substrate with SnO2 quantum dots and dielectric polymer layer. The size and density of fabricated SnO2 quantum dot were about 15 nm and 2.4x10(11)cm(2), respectively. The electrical properties of the nano floating gate capacitor have been investigated by measuring capacitance-voltage charactersitcs. Then the flat band voltage shift due to charging of the electron in SnO2 quantum dot was ranged from 1.2 V to 4 V. And the transmission electron microscopy and the optical absorption spectra have been measured to investigage the morphology and absorbance of the SnO2 quantum dots embedded in polymide. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：893 / 896

页数：4

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