Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

被引：30

作者：

Cheng, Lin ^{[1
]}

Palmour, John W. ^{[1
]}

Agarwal, Anant K. ^{[2
]}

Allen, Scott T. ^{[1
]}

Brunt, Edward V. ^{[1
]}

Wang, Gangyao ^{[1
]}

Pala, Vipindas ^{[1
]}

Sung, Woongje ^{[3
]}

Huang, Alex Q. ^{[3
]}

O'Loughlin, Michael ^{[1
]}

Burk, Albert ^{[1
]}

Grider, Dave ^{[1
]}

Scozzie, Charles ^{[4
]}

机构：

[1] Cree Inc, 4600 Silicon Dr, Durham, NC 27703 USA

[2] Dept Energy, Washington, DC USA

[3] North Carolina State Univ, Future Renewable Elect Energy Delivery & Manageme, Durham, NC USA

[4] US Army, Res Lab, Adelphi, MD USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

Silicon Carbide; High Voltage; MOSFET; GTO; IGBT; Power Diode; Medium-Voltage Drive; Variable Speed Drive; renewable energy conversion; power grid; pulsed power; 1 CM(2); KV;

D O I：

10.4028/www.scientific.net/MSF.778-780.1089

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Advanced high-voltage (>= 10 kV) silicon carbide (SiC) devices described in this paper have the potential to significantly impact the system size, weight, high-temperature reliability, and cost of modern variable-speed medium-voltage (MV) systems such as variable speed (VSD) drives for electric motors, integration of renewable energy including energy storage, micro-grids, and compact pulsed power systems. In this paper, we review the current status of the development of 10 kV - 20 kV class power devices in SiC, including MOSFETs, JBS diodes, IGBTs, GTO thyristors, and PiN diodes at Cree. Advantages and weakness of each device are discussed and compared. A strategy for high-voltage SiC power device development is proposed.

引用

页码：1089 / +

页数：2

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