Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

被引：30

作者：

Cheng, Lin ^{[1
]}

Palmour, John W. ^{[1
]}

Agarwal, Anant K. ^{[2
]}

Allen, Scott T. ^{[1
]}

Brunt, Edward V. ^{[1
]}

Wang, Gangyao ^{[1
]}

Pala, Vipindas ^{[1
]}

Sung, Woongje ^{[3
]}

Huang, Alex Q. ^{[3
]}

O'Loughlin, Michael ^{[1
]}

Burk, Albert ^{[1
]}

Grider, Dave ^{[1
]}

Scozzie, Charles ^{[4
]}

机构：

[1] Cree Inc, 4600 Silicon Dr, Durham, NC 27703 USA

[2] Dept Energy, Washington, DC USA

[3] North Carolina State Univ, Future Renewable Elect Energy Delivery & Manageme, Durham, NC USA

[4] US Army, Res Lab, Adelphi, MD USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

Silicon Carbide; High Voltage; MOSFET; GTO; IGBT; Power Diode; Medium-Voltage Drive; Variable Speed Drive; renewable energy conversion; power grid; pulsed power; 1 CM(2); KV;

D O I：

10.4028/www.scientific.net/MSF.778-780.1089

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Advanced high-voltage (>= 10 kV) silicon carbide (SiC) devices described in this paper have the potential to significantly impact the system size, weight, high-temperature reliability, and cost of modern variable-speed medium-voltage (MV) systems such as variable speed (VSD) drives for electric motors, integration of renewable energy including energy storage, micro-grids, and compact pulsed power systems. In this paper, we review the current status of the development of 10 kV - 20 kV class power devices in SiC, including MOSFETs, JBS diodes, IGBTs, GTO thyristors, and PiN diodes at Cree. Advantages and weakness of each device are discussed and compared. A strategy for high-voltage SiC power device development is proposed.

引用

页码：1089 / +

页数：2

共 11 条

[1] An Update on High Voltage SiC Power Devices
Agarwal, A.
Zhang, Q.
Das, M.
Ryu, S.
Cheng, L.
O'Loughlin, M.
Burk, A.
Palmour, J.
[J]. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES, 2011, 41 (08): : 39 - 41
[2] [Anonymous], 2013, THESIS
[3] Cheng L., 2013, P ISPSD 2013 KAN JAP
[4] Cheng L., 2013, P IEEE PPPS 2013 SAN
[5] 15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors
Cheng, Lin
Agarwal, Anant K.
Capell, Craig
O'Loughlin, Michael
Lam, Khiem
Zhang, Jon
Richmond, Jim
Burk, Al
Palmour, John W.
Ogunniyi, Aderinto A.
O'Brien, Heather K.
Scozzie, Charles J.
[J]. SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 978 - +
[6] 16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications
Cheng, Lin
Agarwal, Anant K.
O'Loughlin, Michael
Capell, Craig
Lam, Khiem
Jonas, Charlotte
Richmond, Jim
Burk, Al
Palmour, John W.
Ogunniyi, Aderinto A.
O'Brien, Heather K.
Scozzie, Charles J.
[J]. SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 895 - +
[7] Palmour J. W., 2010, 2010 International Power Electronics Conference (IPEC - Sapporo), P1006, DOI 10.1109/IPEC.2010.5542027
[8] Ryu S., 2013, ICSCRM 2013 MIYAZ JA
[9] Sugawara Y., 2001, P ISPSD 2001 OS JAP
[10] Sung W., 2008, P ISPSD 2008 ORL FL, P271

← 1 2 →