Using ion beam analysis in determining the mechanisms of cleavage in hydrogen ion implanted Si

Hydrogen ion implantation in Si has been shown to be an effective means of inducing cleavage in Si and facilitating the transfer of thin slices to other substrates, a process known as Ton-C,ut. Qualitatively it is known that implanted hydrogen in Si evolves under heating to form H, gas bubbles with high internal pressure, which then drives the cleavage process. However, a fundamental understanding of how the physics of ion implantation influence this process is still evolving. In this work we describe how ion channeling and elastic recoil detection studies can be used to gain a more complete understanding of how the ion damage and H concentration profile contribute to the mechanisms of cleavage in hydrogen ion implanted Si. (C) 2004 Elsevier B.V. All rights reserved.