Electrical peculiarities in Al/Si/Ge/... /Ge/Si and Al/SiGe/Si structures

被引：10
作者：
Horváth, ZJ
Jarrendähl, K
Adám, M
Szabó, I
Van Tuyen, V
Czigány, Z
机构：
[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary
[2] Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
来源：
APPLIED SURFACE SCIENCE | 2002年 / 190卷 / 1-4期
关键词：
Si; SiGe; Schottky barrier; superlattice; amorphous; electrical behaviour;
D O I：
10.1016/S0169-4332(01)00905-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The current-voltage (I-V) and capacitance-voltage (C-V) behaviour of different Si/Ge multilayers and SiGe single layers prepared on p-type Si substrates by magnetron sputtering and annealing, has been studied in the temperature rang, of 80-320 K by using Al Schottky contacts as test structures. Although a significant influence of the microstructure of the Si/Ge multilayers and SiGe layers was obtained on the electrical behaviour of the structures, the structures exhibited similar specific features. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：403 / 407
页数：5
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