Improved electrical and ferroelectric properties of multiferroic Na0.5Bi0.5TiO3/Bi1.07Nd0.03FeO3/Na0.5Bi0.5TiO3 sandwiched structure by a sol-gel process

被引：5

作者：

Shao, F. ^{[1
,2
]}

Miao, J. ^{[1
]}

Wu, S. Z. ^{[1
]}

Li, Z. H. ^{[1
]}

Xu, X. G. ^{[1
]}

Feng, P. ^{[2
]}

Jiang, Y. ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

[2] Univ Sci & Technol Beijing, Dept Phys, Beijing 100083, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2014年 / 25卷 / 06期

关键词：

BIFEO3; FILMS; THIN-FILMS; BEHAVIOR;

D O I：

10.1007/s10854-014-1860-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A ferroelectric/multiferroic/ferroelectric sandwiched structure composed by Na0.5Bi0.5TiO3 (NBT) and Bi1.07Nd0.03FeO3 (BNF) with a LaNiO3 buffer layer were prepared by a sol-gel method. X-ray diffraction indicated the NBT/BNF/NBT films exhibited a pure perovskite structure. The average grain size of BNF and NBT/BNF/NBT were found to be 40 and 80 nm, respectively. Interestingly, the electrical and ferroelectric properties such as leakage current, dielectric constant, and remnant polarization of NBT/BNF/NBT sandwiched layer, were superior to those of BNF single film. However, the saturation magnetization of NBT/BNF/NBT sandwiched layer was reduced. Our work suggested the NBT/BNF/NBT sandwiched layer with improved multiferroic characteristics have a promising application for future information storage devices.

引用

页码：2411 / 2415

页数：5

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