Tunable stress induced magnetic domain configuration in FePt thin films

被引：13

作者：

Alvarez, N. R. ^{[1
,2
]}

Vazquez Montalbetti, M. E. ^{[3
]}

Gomez, J. E. ^{[1
,2
]}

Moya Riffo, A. E. ^{[1
,2
]}

Vicente Alvarez, M. A. ^{[1
,2
]}

Goovaerts, E. ^{[4
]}

Butera, A. ^{[2
,5
]}

机构：

[1] Comis Nacl Energia Atom, Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina

[2] Consejo Nacl Invest Cient & Tecn, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina

[3] Univ Tecnol Nacl, Fac Reg Villa Maria, Ingn Quim, RA-5900 Cordoba, Argentina

[4] Univ Antwerp, Dept Phys, Expt Condensed Matter Phys, BE-2610 Antwerp, Belgium

[5] Comis Nacl Energia Atom, Ctr Atom Bariloche, Inst Balseiro, UN Cuyo, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2015年 / 48卷 / 40期

关键词：

FePt; thin films; magnetoelastic effects; stripe domains; ELASTIC-CONSTANTS; STRUCTURAL-PROPERTIES; TRANSITION; DEPENDENCE; STRAIN;

D O I：

10.1088/0022-3727/48/40/405003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a study of the magnetic properties of chemically disordered ferromagnetic FePt films of 100 nm thickness that have been grown by sputtering with different Ar pressures (3 mTorr <= P-Ar <= 13 mTorr). We found that the residual stress can be controlled by the sputtering pressure, which in turn allows to tune the perpendicular magnetic anisotropy due to magnetoelastic effects. Films deposited at lower Ar pressures display an in-plane compressive stress that favors an out of plane component of the magnetization and the formation of a magnetic domain structure in the form of stripes. For higher pressures the stress is relaxed and the magnetic configuration changes to planar domains. These results show the possibility to accurately tune the initial magnetic state in films with potential applications in magnetoelectrically coupled devices.

引用

页数：10

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