One-Volt, Solution-Processed InZnO Thin-Film Transistors

被引：51
作者：
Cai, Wensi [1 ]
Li, Haiyun [1 ]
Zang, Zhigang [1 ]
机构：
[1] Chongqing Univ, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 04期
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
Annealing; Films; Thin film transistors; Performance evaluation; Temperature measurement; Surface morphology; Logic gates; Solution-processed; indium-zinc-oxide (IZO); thin-film transistors (TFTs); one-volt operation;
D O I：
10.1109/LED.2021.3062422
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we report solution-processed, high-performance Indium-Zinc-Oxide (IZO) thin-film transistors (TFTs). The annealing temperature of IZO films are studied and found that devices annealed at 350 degrees C exhibit the best performance. With the use of a thin AlxOy layer as the gate dielectric, one-volt IZO TFTs are demonstrated, showing a high current on/off ratio of > 10(5), a high mobility over 10 cm(2)/Vs, and a low subthreshold swing (SS) of 83 mV/dec, which is fairly close to the theoretical limit of SS at 300 K. Such a high device performance is also found comparable to those deposited using vacuum-based methods. As a result, the presented devices might possess a great potential in low-cost, low-power electronics.
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收藏
页码：525 / 528
页数：4
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