Pure and Sn-doped ZnO films produced by pulsed laser deposition

被引：48
作者：
Holmelund, E
Schou, J [1 ]
Tougaard, S
Larsen, NB
机构：
[1] Riso Natl Lab, Dept Opt & Fluid Dynam, DK-4000 Roskilde, Denmark
[2] Univ So Denmark, Dept Phys, DK-5230 Odense M, Denmark
[3] Riso Natl Lab, Danish Polymer Ctr, DK-4000 Roskilde, Denmark
来源：
APPLIED SURFACE SCIENCE | 2002年 / 197卷
关键词：
pulsed laser deposition; transparent conductors; ZnO;
D O I：
10.1016/S0169-4332(02)00367-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A new technique, metronome doping, has been used for doping of films during pulsed laser deposition (PLD). This technique makes it possible to dope continuously during film growth with different concentrations of a dopant in one deposition sequence. Films of pure and doped ZnO have been produced with Sn concentrations up to 16%. The specific resistivity is found to increase and the transmission of visible light to decrease with increasing Sn concentration. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：467 / 471
页数：5
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