Monolithic integration of AlGaN/GaN HFET with MOS on silicon ⟨111⟩ substrates

被引：25

作者：

Chyurlia, P. N. ^{[1
]}

Semond, F. ^{[3
]}

Lester, T. ^{[2
]}

Bardwell, J. A. ^{[2
]}

Rolfe, S. ^{[2
]}

Tang, H. ^{[2
]}

Tarr, N. G. ^{[1
]}

机构：

[1] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[3] CNRS, CHREA, F-06560 Valbonne, France

来源：

ELECTRONICS LETTERS | 2010年 / 46卷 / 03期

基金：

加拿大自然科学与工程研究理事会;

关键词：

TRANSISTORS;

D O I：

10.1049/el.2010.3167

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN HFETs and silicon MOSFETs have been integrated monolithically on a silicon < 111 > substrate. A differential heteroepitaxy technique was used to grow AlGaN/GaN HFET layers on silicon < 111 > substrates while leaving protected areas of atomically smooth silicon in which MOSFETs are built.

引用

页码：240 / 241

页数：2

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