Growth of In-doped ZnO films by metalorganic chemical vapor deposition on GaN(0001) templates

被引：2

作者：

Ben-Yaacov, Tammy ^{[1
]}

Ive, Tommy ^{[1
]}

Van de Walle, Chris G. ^{[1
]}

Mishra, Umesh K. ^{[2
]}

Speck, James S. ^{[1
]}

DenBaars, Steven P. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6 | 2009年 / 6卷 / 06期

基金：

美国国家科学基金会;

关键词：

ZINC-OXIDE;

D O I：

10.1002/pssc.200881529

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the properties of indium-doped zinc oxide layers grown by metalorganic chemical vapor deposition on semi-insulating GaN(0001) templates. Specular and transparent films with n-type carrier concentrations up to 1.82 x 10(19) cm(-3), as determined by hall measurements, were grown. An undoped film grown under the same conditions had carrier concentration 5.4 x 10(17) cm(-3). An interesting trend was observed for carrier concentration dependence on In precursor flow. For low In flows, carrier concentration increased with TMI flow until a peak, was reached for a TMI flow of 5 standard cubic centimetres per minute. Beyond this flow, carrier concentration decreased with increasing TMI flow rate. A sheet resistance as low as 185 ohm/sq was achieved for the indium-doped films, which is a significant decrease from the undoped ZnO film which had a sheet resistance of 3100 ohm/sq. The results of this In doping study show that In is an effective dopant for controlling the n-type conductivity of ZnO. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1464 / +

页数：2

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