Effect of Cu/Ga ratio on deep-level defects in CuGaSe2 thin films studied by photocapacitance measurements with two-wavelength excitation

被引：7

作者：

Hu, Xiaobo ^{[1
]}

Xue, Juanjuan ^{[1
]}

Tian, Jiao ^{[1
]}

Weng, Guoen ^{[1
]}

Chen, Shaoqiang ^{[1
]}

机构：

[1] East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China

来源：

APPLIED OPTICS | 2017年 / 56卷 / 14期

基金：

中国国家自然科学基金;

关键词：

SOLAR-CELLS; CHALCOPYRITES; LIMITATIONS; DEPENDENCE; EFFICIENCY;

D O I：

10.1364/AO.56.004090

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The effect of the Cu/Ga ratio on properties of deep-level defects in CuGaSe2 thin films were studied, using photocapacitance methods with two-wavelength excitation. The transient photocapacitance method, using a monochromatic probe light, determined two kinds of defects located at 0.8 eV and 1.5 eV above the valence band, respectively, the positions of which kept almost constant regardless of Cu/Ga ratio. In addition to the probe light, laser light with a wavelength of 1550 nm corresponding to 0.8 eV was then used to study the saturation effect of the deep-level defect at 0.8 eV above the valence band. The results suggest that the defect level at 0.8 eV acts as a recombination center at room temperature, and it becomes more effective in CuGaSe2 films with a lower Cu/Ga ratio. (C) 2017 Optical Society of America

引用

页码：4090 / 4094

页数：5

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