Diode-pumped Yb:GSO femtosecond laser

被引:63
作者
Li, Wenxue [1 ]
Hao, Qiang
Zhai, Hui
Zeng, Heping
Lu, Wei
Zhao, Guangjun
Zheng, Lihe
Su, Liangbi
Xu, Jun
机构
[1] E China Normal Univ, Key Lab Opt & Magnet Resonance Spect, Shanghai 200062, Peoples R China
[2] E China Normal Univ, Dept Phys, Shanghai 200062, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
关键词
D O I
10.1364/OE.15.002354
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Compact femtosecond laser operation of Yb:Gd2SiO5 (Yb:GSO) crystal was demonstrated under high-brightness diode-end-pumping. A semiconductor saturable absorption mirror was used to start passive mode-locking. Stable mode-locking could be realized near the emission bands around 1031, 1048, and 1088 nm, respectively. The mode-locked Yb: GSO laser could be tuned from one stable mode-locking band to another with adjustable pulse durations in the range 1 similar to 100 ps by slightly aligning laser cavity to allow laser oscillations at different central wavelengths. A pair of SF10 prisms was inserted into the laser cavity to compensate for the group velocity dispersion. The mode-locked pulses centered at 1031 nm were compressed to 343 fs under a typical operation situation with a maximum output power of 396 mW. (c) 2007 Optical Society of America.
引用
收藏
页码:2354 / 2359
页数:6
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