Electrical and optical properties of GaN/Al2O3 interfaces

被引：22

作者：

Look, DC ^{[1
]}

Jones, RL

Sun, XL

Brillson, LJ

Ager, JW

Park, SS

Han, JH

Molnar, RM

Maslar, JE

机构：

[1] USAF, Res Lab, MLPS, Wright Patterson AFB, OH 45433 USA

[2] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[3] Ohio State Univ, Dept Elect Engn, Columbus, OH 43210 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Sci Mat, Berkeley, CA 94720 USA

[5] Samsung Adv Inst Technol, Suwon 440600, South Korea

[6] MIT, Lincoln Lab, Lexington, MA 02420 USA

[7] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2002年 / 14卷 / 48期

关键词：

D O I：

10.1088/0953-8984/14/48/386

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Hall-effect, photoluminescence (PL), cathodoluminescence (CL), and Raman scattering measurements have been used to characterize the Ga (top) and N (bottom) faces of free-standing GaN layers grown by hydride vapour phase epitaxy on Al2O3. The material near the bottom has higher carrier concentration, lower mobility, larger PL linewidths, brighter CL emission, and stronger Raman plasmon-phonon lines than the material near the top. All results are consistent with the diffusion of O from the Al2O3 substrate, sometimes covering a distance of several tens of micrometres. The O donor is compensated by Ga vacancy acceptors, known to exist from positron annihilation experiments. However, Raman and CL profiling show that the poor interface region ends rather abruptly, giving excellent material near the top (Ga) face.

引用

页码：13337 / 13344

页数：8

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