Shaping Ge Islands on Si(001) Surfaces with Misorientation Angle

被引：39
|
作者：
Persichetti, L. [1 ]
Sgarlata, A. [1 ]
Fanfoni, M. [1 ]
Balzarotti, A. [1 ]
机构：
[1] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy
来源：
PHYSICAL REVIEW LETTERS | 2010年 / 104卷 / 03期
关键词：
SCANNING-TUNNELING-MICROSCOPY; GROWTH; LAYER; RELAXATION; SI(100); PATHWAY; SI;
D O I：
10.1103/PhysRevLett.104.036104
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A complete description of Ge growth on vicinal Si(001) surfaces in the angular miscut range 0 degrees-8 degrees is presented. The key role of substrate vicinality is clarified from the very early stages of Ge deposition up to the nucleation of 3D islands. By a systematic scanning tunneling microscopy investigation we are able to explain the competition between step-flow growth and 2D nucleation and the progressive elongation of the 3D islands along the miscut direction [110]. Using finite element calculations, we find a strict correlation between the morphological evolution and the energetic factors which govern the {105} faceting at atomic scale.
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页数：4
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