Study on opto-electronic integration of resonant tunnelling diodes

被引：0

作者：

Niu Ping-juan ^{[1
]}

Hu Hai-rong ^{[1
]}

Liu Hong-wei ^{[1
]}

Wang Wen-xin ^{[2
]}

Shang Xun-Zhong ^{[2
]}

机构：

[1] Tianjin Polytech Univ, Sch Informat & Commun Eng, Tianjin 300160, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

NANOSCIENCE AND TECHNOLOGY, PTS 1 AND 2 | 2007年 / 121-123卷

关键词：

Resonant Tunnelling Diode (RTD); Heterojunction Phototransistor Transistor (HPT); Monolithic Integration; negative resistance device;

D O I：

10.4028/www.scientific.net/SSP.121-123.533

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We designed the monolithic opto-electronic integrated circuit composed by Resonant Tunnelling Diodes (RTD) and Heterojunction Phototransistor (HPT). Circuit simulation of RTD and HPT integration is firstly processed. The material structure and technological process of the device is introduced in detail. A good characteristic is obtained with high Peak-to-valley current ratio.

引用

页码：533 / 535

页数：3

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