Investigations on Degradation and Optimization of 1.2kV 4H-SiC MOSFET Under Repetitive Unclamped Inductive Switching Stress

被引：0

作者：

Liu, Siyang ^{[1
]}

Sun, Weifeng ^{[1
]}

Qian, Qinsong ^{[1
]}

Gu, Chunde ^{[1
]}

Huang, Yu ^{[1
]}

Bai, Song ^{[2
]}

Chen, Gang ^{[2
]}

Huang, Runhua ^{[2
]}

Tao, Yonghong ^{[2
]}

Liu, Ao ^{[2
]}

机构：

[1] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing, Jiangsu, Peoples R China

[2] CETC, Res Inst 55, Nanjing, Jiangsu, Peoples R China

来源：

2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD) | 2015年

关键词：

4H-SiC MOSFET; Repetitive UIS; Degradation; Optimization; SIC MOSFET;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, the degradation mechanism of 1.2kV 4H-SiC MOSFET under repetitive Unclamped Inductive Switching (UIS) stress has been investigated. The hot-holes injection and trapping into the gate oxide above the JFET region is observed, resulting in the increase of the off-state drain-source leakage current (IDSS) and the decrease of the on-state resistance (R-dson). Moreover, an improved device with step gate oxide above the JFET region is proposed, which can effectively restrict the degradation under repetitive UIS stress, while the fresh breakdown voltage (BV) and R-dson are almost unaffected.

引用

页码：205 / 208

页数：4

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