Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1-xN structures for deep ultraviolet emissions below 230 nm

被引：121

作者：

Zhang, JP ^{[1
]}

Khan, MA ^{[1
]}

Sun, WH ^{[1
]}

Wang, HM ^{[1
]}

Chen, CQ ^{[1
]}

Fareed, Q ^{[1
]}

Kuokstis, E ^{[1
]}

Yang, JW ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 23期

关键词：

D O I：

10.1063/1.1528726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report the pulsed atomic-layer epitaxy of ultrahigh-quality AlN epilayers and AlN/Al0.85Ga0.15N multiple quantum wells (MQWs) on basal plane sapphire substrates. Symmetric and asymmetric x-ray diffraction (XRD) measurements and room-temperature (RT) photoluminescence (PL) were used to establish the ultrahigh structural and optical quality. Strong band-edge RT PL at 208 and 228 nm was obtained from the AlN epilayers and the AlN/Al0.85Ga0.15N MQWs. These data clearly establish their suitability for sub-250-nm deep UV emitters. (C) 2002 American Institute of Physics.

引用

页码：4392 / 4394

页数：3

共 28 条

[1] Sub-milliwatt power III-N light emitting diodes at 285 nm [J].

Adivarahan, V ;

Zhang, JP ;

Chitnis, A ;

Shuai, W ;

Sun, J ;

Pachipulusu, R ;

Shatalov, M ;

Khan, MA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (4B) :L435-L436

[2] Submilliwatt operation of AlInGaN based multifinger-design 315 nm light emitting diode (LED) over sapphire substrate [J].

Chitnis, A ;

Adivarahan, V ;

Shatalov, M ;

Zhang, JP ;

Gaevski, M ;

Wu, SA ;

Pachipulusu, R ;

Sun, J ;

Simin, K ;

Simin, G ;

Yang, JW ;

Khan, MA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (3B) :L320-L322

[3] 324 nm light emitting diodes with milliwatt powers [J].

Chitnis, A ;

Zhang, JP ;

Adivarahan, V ;

Shuai, W ;

Sun, J ;

Shatalov, M ;

Yang, JW ;

Simin, G ;

Khan, MA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (4B) :L450-L451

[4] AlGaN/GaN quantum well ultraviolet light emitting diodes [J].

Han, J ;

Crawford, MH ;

Shul, RJ ;

Figiel, JJ ;

Banas, M ;

Zhang, L ;

Song, YK ;

Zhou, H ;

Nurmikko, AV .

APPLIED PHYSICS LETTERS, 1998, 73 (12) :1688-1690

[5]

Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495

[6] Efficient 230-280 nm emission from high-Al-content AlGaN-based multiquantum wells [J].

Hirayama, H ;

Enomoto, Y ;

Kinoshita, A ;

Hirata, A ;

Aoyagi, Y .

APPLIED PHYSICS LETTERS, 2002, 80 (01) :37-39

[7] Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN [J].

Iwaya, M ;

Terao, S ;

Sano, T ;

Ukai, T ;

Nakamura, R ;

Kamiyama, S ;

Amano, H ;

Akasaki, I .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) :951-955

[8]

Iwaya M, 2001, PHYS STATUS SOLIDI A, V188, P117, DOI 10.1002/1521-396X(200111)188:1<117::AID-PSSA117>3.0.CO

[9]

2-X

[10] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ALN OVER SAPPHIRE SUBSTRATES [J].

KHAN, MA ;

KUZNIA, JN ;

SKOGMAN, RA ;

OLSON, DT ;

MACMILLAN, M ;

CHOYKE, WJ .

APPLIED PHYSICS LETTERS, 1992, 61 (21) :2539-2541

← 1 2 3 →