Calculated optical properties of wurtzite InN

We report ab initio, self-consistent calculations of the dielectric function of wurtzite indium nitride (w-InN). Our calculations employed a local density approximation (LDA) potential, a linear combination of atomic orbital basis set, and the Bagayoko-Zhao-Williams (BZW) method. Our findings agree very well with recent measurements up to photon energies of 6 eV. This excellent agreement shows the correct description, by the LDA-BZW method, of the relative separations between upper valence bands and low-lying conduction bands, in general, and corroborates our previous result of 0.88 eV for the intrinsic, fundamental band gap of w-InN, in particular. We also report results of simulations of the effect of high electron doping on the optical properties of InN. (c) 2007 American Institute of Physics.