Electrical behavior of β-Ga2O3 Schottky diodes with different Schottky metals

被引：167

作者：

Yao, Yao ^{[1
]}

Gangireddy, Raveena ^{[1
]}

Kim, Jaewoo ^{[1
]}

Das, Kalyan Kumar ^{[2
]}

Davis, Robert F. ^{[1
]}

Porter, Lisa M. ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, 5000 Forbes Ave, Pittsburgh, PA 15213 USA

[2] JBP Mat, Morrisville, NC 27560 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2017年 / 35卷 / 03期

基金：

美国国家科学基金会;

关键词：

BARRIER HEIGHT; VOLTAGE; GROWTH;

D O I：

10.1116/1.4980042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Schottky diodes based on ((2) over bar 01) beta-Ga2O3 substrates and (010) beta-Ga2O3 homoepitaxial layers were formed using five different Schottky metals: W, Cu, Ni, Ir, and Pt. Based on a comparison of the effects of different wet chemical surface treatments on the Ga2O3 Schottky diodes, it was established that a treatment with an organic solvent, cleaning with HCl and H2O2, and rinsing with deionized water following each step yielded the best results. Schottky barrier heights calculated from current-voltage (I-V) and capacitance-voltage (C-V) measurements of the five selected metals were typically in the range of 1.0-1.3 and 1.6-2.0 eV, respectively, and showed little dependence on the metal work function. Several diodes also displayed inhomogeneous Schottky barrier behavior at room temperature. The results indicate that bulk or near-surface defects and/or unpassivated surface states may have a more dominant effect on the electrical behavior of these diodes compared to the choice of Schottky metal and its work function. (C) 2017 American Vacuum Society.

引用

页数：7

共 41 条

[1] Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes [J].

Armstrong, Andrew M. ;

Crawford, Mary H. ;

Jayawardena, Asanka ;

Ahyi, Ayayi ;

Dhar, Sarit .

JOURNAL OF APPLIED PHYSICS, 2016, 119 (10)

[2] SEMICONDUCTORS FOR HIGH-VOLTAGE, VERTICAL CHANNEL FIELD-EFFECT TRANSISTORS [J].

BALIGA, BJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1759-1764

[3] ZnO Schottky barriers and Ohmic contacts [J].

Brillson, Leonard J. ;

Lu, Yicheng .

JOURNAL OF APPLIED PHYSICS, 2011, 109 (12)

[4] EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS [J].

CHEUNG, SK ;

CHEUNG, NW .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :85-87

[5] Oxidation of GaN(0001) by low-energy ion bombardment [J].

Grodzicki, M. ;

Mazur, P. ;

Zuber, S. ;

Brona, J. ;

Ciszewski, A. .

APPLIED SURFACE SCIENCE, 2014, 304 :20-23

[6] Au/n-ZnO rectifying contact fabricated with hydrogen peroxide pretreatment [J].

Gu, Q. L. ;

Cheung, C. K. ;

Ling, C. C. ;

Ng, A. M. C. ;

Djurisic, A. B. ;

Lu, L. W. ;

Chen, X. D. ;

Fung, S. ;

Beling, C. D. ;

Ong, H. C. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)

[7] Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n--Ga2O3 drift layers grown by halide vapor phase epitaxy [J].

Higashiwaki, Masataka ;

Konishi, Keita ;

Sasaki, Kohei ;

Goto, Ken ;

Nomura, Kazushiro ;

Quang Tu Thieu ;

Togashi, Rie ;

Murakami, Hisashi ;

Kumagai, Yoshinao ;

Monemar, Bo ;

Koukitu, Akinori ;

Kuramata, Akito ;

Yamakoshi, Shigenobu .

APPLIED PHYSICS LETTERS, 2016, 108 (13)

[8]

Higashiwaki M, 2013, IEEE DEVICE RES CONF

[9] Development of gallium oxide power devices [J].

Higashiwaki, Masataka ;

Sasaki, Kohei ;

Kuramata, Akito ;

Masui, Takekazu ;

Yamakoshi, Shigenobu .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 211 (01) :21-26

[10] Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics [J].

Higashiwaki, Masataka ;

Sasaki, Kohei ;

Kamimura, Takafumi ;

Wong, Man Hoi ;

Krishnamurthy, Daivasigamani ;

Kuramata, Akito ;

Masui, Takekazu ;

Yamakoshi, Shigenobu .

APPLIED PHYSICS LETTERS, 2013, 103 (12)

← 1 2 3 4 5 →