Materials chemistry for low-k materials

被引：255

作者：

Hatton, Benjamin D.

Landskron, Kai

Hunks, William J.

Bennett, Mark R.

Shukaris, Donna

Perovic, Douglas D.

Ozin, Geoffrey A.

机构：

[1] Univ Toronto, Dept Chem, Mat Chem Res Grp, Toronto, ON M5S 3H6, Canada

[2] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada

[3] Univ Toronto, Innovat Fdn, Toronto, ON M5G 1L7, Canada

来源：

MATERIALS TODAY | 2006年 / 9卷 / 03期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1016/S1369-7021(06)71387-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The microelectronics industry is constantly trying to reinvent itself, to find new technological solutions to keep pace with the trend of increasing device densities in ultra-large-scale integrated (ULSI) circuits. 22 Integral in this development has been the replacement of the conventional Al/SiO2 metal and dielectric materials in multilevel interconnect structures. Higher-conductivity Cu has now successfully replaced Al interconnects, but there is still a need for new low dielectric constant (k) materials, as an interlayer dielectric.

引用

页码：22 / 31

页数：10

共 50 条

[31] Hydrogen bonding of low-k materials deposited by ICPCVD [J].

Oh, T ;

Lee, KM ;

Lee, HJ ;

Choi, CK .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 44 (05) :1118-1122

[32] Low-k dielectric advances from TSMC and Applied Materials [J].

不详 .

SOLID STATE TECHNOLOGY, 2001, 44 (03) :40-+

[33] Porosity of low-k materials studied by slow positron beam [J].

Brusa, RS ;

Macchi, C ;

Mariazzi, S ;

Karwasz, GP .

ACTA PHYSICA POLONICA A, 2005, 107 (04) :702-711

[34] Advanced Organic Polymer for the Aggressive Scaling of Low-k Materials [J].

Pantouvaki, Marianna ;

Huffman, Craig ;

Zhao, Larry ;

Heylen, Nancy ;

Ono, Yukiharu ;

Nakajima, Michio ;

Nakatani, Koji ;

Beyer, Gerald P. ;

Baklanov, Mikhail R. .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)

[35] Damage Free Cryogenic Etching of Ultra Low-k Materials [J].

Baklanov, Mikhail R. ;

Zhang, Liping ;

Dussart, Remi ;

de Marneffe, Jean-Francois .

PROCEEDINGS OF THE 2013 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC), 2013,

[36] Wire-bonding process development for low-k materials [J].

Tan, J ;

Zhong, ZW ;

Ho, HM .

MICROELECTRONIC ENGINEERING, 2005, 81 (01) :75-82

[37] Impact of downstream ash plasmas on ultra low-k materials [J].

Possémé, N ;

David, T ;

Meininger, P ;

Louveau, O ;

Chevolleau, T ;

Joubert, O ;

Louis, D .

ULTRA CLEAN PROCESSING OF SILICON SURFACES VII, 2005, 103-104 :337-340

[38] Future of PECVD and Spin-on ultra low-k Materials [J].

Volksen, W. ;

Frot, T. ;

Magbitang, T. ;

Gates, S. ;

Oliver, Mark ;

Dauskardt, R. ;

Dubois, G. .

2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM), 2011,

[39] Mechanical Properties and Interface Characteristics of Nanoporous Low-k Materials [J].

Si, Lina ;

Guo, Dan ;

Xie, Guoxin ;

Luo, Jianbin .

ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (16) :13850-13858

[40] Novel method of estimating dielectric constant for low-k materials [J].

Fukuda, T., 1600, Japan Society of Applied Physics (41)

← 1 2 3 4 5 →