Materials chemistry for low-k materials

被引：256

作者：

Hatton, Benjamin D.

Landskron, Kai

Hunks, William J.

Bennett, Mark R.

Shukaris, Donna

Perovic, Douglas D.

Ozin, Geoffrey A.

机构：

[1] Univ Toronto, Dept Chem, Mat Chem Res Grp, Toronto, ON M5S 3H6, Canada

[2] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada

[3] Univ Toronto, Innovat Fdn, Toronto, ON M5G 1L7, Canada

来源：

MATERIALS TODAY | 2006年 / 9卷 / 03期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1016/S1369-7021(06)71387-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The microelectronics industry is constantly trying to reinvent itself, to find new technological solutions to keep pace with the trend of increasing device densities in ultra-large-scale integrated (ULSI) circuits. 22 Integral in this development has been the replacement of the conventional Al/SiO2 metal and dielectric materials in multilevel interconnect structures. Higher-conductivity Cu has now successfully replaced Al interconnects, but there is still a need for new low dielectric constant (k) materials, as an interlayer dielectric.

引用

页码：22 / 31

页数：10

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