Materials chemistry for low-k materials

被引：252
作者：
Hatton, Benjamin D.
Landskron, Kai
Hunks, William J.
Bennett, Mark R.
Shukaris, Donna
Perovic, Douglas D.
Ozin, Geoffrey A.
机构：
[1] Univ Toronto, Dept Chem, Mat Chem Res Grp, Toronto, ON M5S 3H6, Canada
[2] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada
[3] Univ Toronto, Innovat Fdn, Toronto, ON M5G 1L7, Canada
来源：
MATERIALS TODAY | 2006年 / 9卷 / 03期
基金：
加拿大自然科学与工程研究理事会;
关键词：
D O I：
10.1016/S1369-7021(06)71387-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The microelectronics industry is constantly trying to reinvent itself, to find new technological solutions to keep pace with the trend of increasing device densities in ultra-large-scale integrated (ULSI) circuits. 22 Integral in this development has been the replacement of the conventional Al/SiO2 metal and dielectric materials in multilevel interconnect structures. Higher-conductivity Cu has now successfully replaced Al interconnects, but there is still a need for new low dielectric constant (k) materials, as an interlayer dielectric.
引用
收藏
页码：22 / 31
页数：10
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