Giant Magnetoresistance in Narrow-Gap Ferroelectric-Semiconductor PbSnTe:In

被引：8
作者：
Klimov, A. [1 ]
Sherstyakova, V. [1 ]
Shumsky, V. [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia
来源：
FERROELECTRICS | 2009年 / 378卷
关键词：
D O I：
10.1080/00150190902848016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A giant (up to 104) magnetoresistance effect in magnetic fields B 4 T was observed in MBE-grown PbSnTe:In films under conditions with space-charge-controlled limitation of injection currents. The relative change in the electric current depended on the strength and mutual orientation of the two (electric and magnetic) fields. The effect is discussed in terms of a model in which the static dielectric permittivity of the material is assumed to be dependent on crystallographic orientation. Experimental data that show how the permittivity of PbSnTe:In films and their current-voltage characteristics depend on the orientation of the electric field vector at B = 0 are reported.
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收藏
页码：101 / 110
页数：10
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