Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1-xO2 Layers

被引：84

作者：

Materano, Monica ^{[1
]}

Mittmann, Terence ^{[1
]}

Lomenzo, Patrick D. ^{[1
]}

Zhou, Chuanzhen ^{[2
]}

Jones, Jacob L. ^{[3
]}

Falkowski, Max ^{[4
]}

Kersch, Alfred ^{[4
]}

Mikolajick, Thomas ^{[1
,5
]}

Schroeder, Uwe ^{[1
]}

机构：

[1] Namlab gGmbH, D-01187 Dresden, Germany

[2] North Carolina State Univ, Analyt Instrumentat Facil, Raleigh, NC 27695 USA

[3] North Carolina State Univ, Dept Mat Sci Altd Engn, Raleigh, NC 27695 USA

[4] Hsch Munchen, D-80335 Munich, Germany

[5] Tech Univ Dresden, Chair Nanoelect Mat, D-01062 Dresden, Germany

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2020年 / 2卷 / 11期

基金：

美国国家科学基金会;

关键词：

hafnia; ferroelectricity; phase analysis; orthorhombic phase; phase transition; oxygen defects; atomic layer deposition; ferroelectric memory; DOPED HAFNIUM OXIDE; FILMS; BEHAVIOR; HFO2; ZRO2;

D O I：

10.1021/acsaelm.0c00680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Although some years have passed since the discovery of the ferroelectric phase in HfO2 and ZrO2 and their solid solution system HfxZr1-xO2, the details of the emergence of this phase are still under investigation. Surface energy contribution, dopant inclusion, residual stress, electric field, and oxygen vacancies have been proposed and studied as potential factors that can influence the phase stabilization. In this work, Hf(x)Zr(1-x)O(2 )layers with different Hf/Zr ratios are deposited via atomic layer deposition (ALD) and physical vapor deposition (PVD) and the amount of oxygen that is supplied during deposition is varied. Results are compared for the two deposition techniques for undoped HfO2. layers. Electrical and structural analysis for the atomic layer-deposited films with different Zr contents and O-2 contents is then performed and the reliability of the films when integrated into capacitors is addressed. The results are correlated to the composition of the layers and a model for layer crystallization is suggested.

引用

页码：3618 / 3626

页数：9

共 40 条

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