Leakage current analysis of diamond Schottky barrier diodes operated at high temperature

被引：14

作者：

Umezawa, Hitoshi ^{[1
]}

Shikata, Shin-ichi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Diamond Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 04期

关键词：

HIGH-VOLTAGE; FILMS; TRANSISTORS; BREAKDOWN;

D O I：

10.7567/JJAP.53.04EP04

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond is a promising material for use in high-power semiconductor devices that are operated under high-temperature conditions. A Schottky barrier diode (SBD) fabricated by using high-quality diamond shows a low reverse leakage current of less than 10(-7)A/cm(2) in a reverse electrical field of 1.5MV/cm at room temperature. The leakage current of this diamond SBD is found to be low even at an elevated temperature of 415 K. The leakage current of this diamond SBD is 2-4 orders of magnitude lower than that of a SiC SBD owing to the larger barrier height. The leakage characteristics of the diamond SBD are modeled using the thermionic-field emission model, which well agrees with experimental results. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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