Kinetic and Static Domain-Wall Pinning at Notches on Ferromagnetic Nanowires

被引:16
作者
Ahn, Sung-Min [1 ,2 ]
Kim, Dong-Hyun [3 ,4 ]
Choel, Sug-Bong [1 ,2 ]
机构
[1] Seoul Natl Univ, Ctr Subwavelength Opt, Seoul 151742, South Korea
[2] Seoul Natl Univ, Sch Phys & Astron, Seoul 151742, South Korea
[3] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea
[4] Chungbuk Natl Univ, Inst Basic Res, Cheongju 361763, South Korea
基金
新加坡国家研究基金会;
关键词
Ferromagnetic; nanowire; domain wall; notch; pinning; Permalloy; MAGNETIC NANOWIRES; MOTION; WIRES;
D O I
10.1109/TMAG.2009.2018662
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigate the domain wall (DW) pinning and depinning processes at notches of ferromagnetic nanowires by means of micromagnetic calculation. Two distinct pinning mechanisms are examined-the kinetic pinning for a moving DW to be trapped at a notch and the static depinning for a trapped DW to move from the notch. Interestingly, the kinetic pinning field is revealed to be noticeably smaller than the static depinning field. The DW energy landscapes around the notch visualize that the kinetic DW motion bypasses the lowest energy state, from which the static depinning field is determined. This phenomenon is basically equivalent to the kinetic and static friction processes in classical mechanics.
引用
收藏
页码:2478 / 2480
页数:3
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