Deep acceptors in undoped GaN

被引：36

作者：

Reshchikov, MA

Shahedipour, F

Korotkov, RY

Ulmer, MP

Wessels, BW

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA

[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷

基金：

美国国家航空航天局; 美国国家科学基金会;

关键词：

GaN; photoluminescence; defects; electron-phonon coupling;

D O I：

10.1016/S0921-4526(99)00417-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Broad photoluminescence bands with maxima at 2.2, 2.5 and 2.9 eV in undoped GaN are studied. The bands are related to three deep accepters, which are characterized by strong electron-phonon coupling. Vibrational properties of the defects are reported. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：105 / 108

页数：4

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