Study of Au nanoparticles/ITO ohmic contacts to p-type GaN

被引：9

作者：

Chen, Lung-Chien ^{[1
]}

Lu, Seng-Fong ^{[1
]}

机构：

[1] Natl Taiwan Univ Technol, Dept Electroopt Engn, Taipei 106, Taiwan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 10期

关键词：

D O I：

10.1002/pssa.200521442

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

P-type ohmic contact between Au nanoparticles/lTO and p-GaN during heat treatment is reported. Optimal conditions are selected to minimize the lowest specific contact resistance to 1.66 x 10(-3) Omega cm(2), as determined by the transmission line model (TLM) after heat treatment process at an alloying temperature of 600 degrees C for 10 min in air. Au nanoparticles/lTO bi-layers are also applied to GaN-based LEDs to form an electrode with a p-type ohmic contact. Typical I-V characteristics of the GaN-based LEDs with an ohmic contact layer of Au nanoparticles/ITO exhibit a forward-bias voltage of 3.43 V at an injection current of 20 mA. (c) 2006 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2451 / 2456

页数：6

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