A 60-GHz CMOS Power Amplifier with Marchand Balun-based Parallel Power Combiner

被引：6

作者：

Yoshihara, Y. ^{[1
]}

Fujimoto, R. ^{[1
]}

Ono, N. ^{[2
]}

Mitomo, T. ^{[2
]}

Hoshino, H. ^{[2
]}

Hamada, M. ^{[1
]}

机构：

[1] Toshiba Co Ltd, Semicond Co, Saiwai Ku, 580-1 Horkawa Cho, Kawasaki, Kanagawa 210, Japan

[2] Toshiba Co Ltd, Corp Res & Dev Ctr, Kawasaki, Kanagawa 210, Japan

来源：

2008 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE | 2008年

关键词：

D O I：

10.1109/ASSCC.2008.4708744

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel Marchand balun-based parallel power combiner suitable for a 60-GHz CMOS power amplifier is proposed. It improves the power efficiency by solving the issues of the phase difference of the signals to be combined and the low coupling factor of the on-chip balun in scaled CMOS technologies. The power amplifier using the proposed power combiner is fabricated in a 90nm CMOS process with 1.2 V supply. Measured power gain, output referred l-dB compression point, and saturated output power are 11.2 dB, +8.3 dBm, and +11.2 dBm, respectively, at 60-GHz.

引用

页码：121 / +

页数：2

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