Field induced local oxidation of Ti and Ti/Au structures by an atomic force microscope with diamond coated tips

被引:17
作者
Vullers, RJM [1 ]
Ahlskog, M [1 ]
Cannaerts, M [1 ]
Van Haesendonck, C [1 ]
机构
[1] Katholieke Univ Leuven, Vaste Stof Fys & Magnetisme Lab, B-3001 Louvain, Belgium
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期
关键词
D O I
10.1116/1.591104
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have investigated field induced local oxidation of thin Ti films with the tip of an atomic force microscope. Tips, which have been coated with a diamond layer to improve their wear resistance, are shown to have a much longer lifetime than conventional uncoated Si tips. We have studied the oxidation characteristics as a function of the applied tip-sample voltage and scanning speed for both diamond coated and uncoated tips. We find that the diamond coated tips result in a thinner oxide layer for the same voltage and scanning speed. The dependence of the oxidation process on the film thickness was studied for diamond coated tips. Thin films can be completely transformed into an oxide layer for a thickness up to 15 nm. Moreover, for these sufficiently thin films the measured ratio between the oxide height and the Ti film thickness is a constant. It is also possible to completely oxidize Ti films which cover Au islands, opening the way to fabricate more complicated structures. (C) 1999 American Vacuum Society. [S0734-211X(99)03006-1].
引用
收藏
页码:2417 / 2422
页数:6
相关论文
共 19 条
[1]   AFM-tip-induced and current-induced local oxidation of silicon and metals [J].
Avouris, P ;
Martel, R ;
Hertel, T ;
Sandstrom, R .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1) :S659-S667
[2]   Atomic force microscope tip-induced local oxidation of silicon: Kinetics, mechanism, and nanofabrication [J].
Avouris, P ;
Hertel, T ;
Martel, R .
APPLIED PHYSICS LETTERS, 1997, 71 (02) :285-287
[3]   THEORY OF THE OXIDATION OF METALS [J].
CABRERA, N ;
MOTT, NF .
REPORTS ON PROGRESS IN PHYSICS, 1948, 12 :163-184
[4]   MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].
DAGATA, JA ;
SCHNEIR, J ;
HARARY, HH ;
EVANS, CJ ;
POSTEK, MT ;
BENNETT, J .
APPLIED PHYSICS LETTERS, 1990, 56 (20) :2001-2003
[5]   Exploiting the properties of carbon nanotubes for nanolithography [J].
Dai, HJ ;
Franklin, N ;
Han, J .
APPLIED PHYSICS LETTERS, 1998, 73 (11) :1508-1510
[6]   SELECTIVE AREA OXIDATION OF SILICON WITH A SCANNING FORCE MICROSCOPE [J].
DAY, HC ;
ALLEE, DR .
APPLIED PHYSICS LETTERS, 1993, 62 (21) :2691-2693
[7]   Mechanisms of surface anodization produced by scanning probe microscopes [J].
Gordon, AE ;
Fayfield, RT ;
Litfin, DD ;
Higman, TK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06) :2805-2808
[8]   Fabrication of Ti/TiOx tunneling barriers by tapping mode atomic force microscopy induced local oxidation [J].
Irmer, B ;
Kehrle, M ;
Lorenz, H ;
Kotthaus, JP .
APPLIED PHYSICS LETTERS, 1997, 71 (12) :1733-1735
[9]   DISORDERED ELECTRONIC SYSTEMS [J].
LEE, PA ;
RAMAKRISHNAN, TV .
REVIEWS OF MODERN PHYSICS, 1985, 57 (02) :287-337
[10]   Probing conducting particles buried in a Nix(SiO2)1-x composite by conducting atomic force microscopy [J].
Luo, EZ ;
Wilson, IH ;
Xu, JB ;
Ma, JX ;
Yan, X .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :1953-1957