Diode-pumped 1.5-1.6 μm laser operation in Er3+ doped YbAl3(BO3)4 microchip

被引：19
作者：
Chen, Yujin [1 ]
Lin, Yanfu [1 ]
Zou, Yuqi [2 ]
Huang, Jianhua [1 ]
Gong, Xinghong [1 ]
Luo, Zundu [1 ]
Huang, Yidong [1 ]
机构：
[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
来源：
OPTICS EXPRESS | 2014年 / 22卷 / 11期
基金：
中国国家自然科学基金;
关键词：
NEODYMIUM ALUMINUM BORATE; YB LASER; CRYSTAL; OSCILLATION; GAIN;
D O I：
10.1364/OE.22.013969
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Er3+ doped YbAl3(BO3)(4) crystal with large absorption coefficient of 184 cm(-1) at pump wavelength of 976 nm is a promising microchip gain medium of 1.5-1.6 mu m laser. End-pumped by a 976 nm diode laser, 1.5-1.6 mu m continuous-wave laser with maximum output power of 220 mW and slope efficiency of 8.1% was obtained at incident pump power of 4.54 W in a c-cut 200-mu m-thick Er:YbAl3(BO3)(4) microchip. When a Co2+:Mg0.4Al2.4O4 crystal was used as the saturable absorber, 1521 nm passively Q-switched pulse laser with about 0.19 mu J energy, 265 ns duration, and 96 kHz repetition rate was realized. (C)2014 Optical Society of America
引用
收藏
页码：13969 / 13974
页数：6
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