Step-bunching and strain effects in Si1-xGex layers and superlattices on vicinal Si(001)

被引：5
|
作者：
Mühlberger, M [1 ]
Schelling, C [1 ]
Springholz, G [1 ]
Schäffler, F [1 ]
机构：
[1] Johannes Kepler Univ Linz, Inst Haibleiterphys, A-4040 Linz, Austria
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期
关键词：
silicon; germanium; step-bunching; superlattice;
D O I：
10.1016/S1386-9477(02)00252-7
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A comparative study is reported of kinetically and thermodynamically driven growth instabilities in the Si SiGe heterosystem on vicinal Si(001). Investigating single Si1-xGex-layers and Si1-xGexSi superlattices, a wide range of the relevant growth parameter space is mapped out, In contrast to earlier reports no evidence for strian-induced step-bunching is found, Single Si1-xGex layers replicate the morphology of the underlying buffer layers and tend to form but clusters near thermal equilibrium. In Si1-xGex/Si superlattices. no significant influence of the Ge-related strain on the step-bunching morphology can be seen. On the other hand, the effect of growth temperature is very pronounced. again indicating the dominant role of kinetics in the fort-nation of step-bunches. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：990 / 994
页数：5
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