Step-bunching and strain effects in Si1-xGex layers and superlattices on vicinal Si(001)

被引：5

作者：

Mühlberger, M ^{[1
]}

Schelling, C ^{[1
]}

Springholz, G ^{[1
]}

Schäffler, F ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Haibleiterphys, A-4040 Linz, Austria

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期

关键词：

silicon; germanium; step-bunching; superlattice;

D O I：

10.1016/S1386-9477(02)00252-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A comparative study is reported of kinetically and thermodynamically driven growth instabilities in the Si SiGe heterosystem on vicinal Si(001). Investigating single Si1-xGex-layers and Si1-xGexSi superlattices, a wide range of the relevant growth parameter space is mapped out, In contrast to earlier reports no evidence for strian-induced step-bunching is found, Single Si1-xGex layers replicate the morphology of the underlying buffer layers and tend to form but clusters near thermal equilibrium. In Si1-xGex/Si superlattices. no significant influence of the Ge-related strain on the step-bunching morphology can be seen. On the other hand, the effect of growth temperature is very pronounced. again indicating the dominant role of kinetics in the fort-nation of step-bunches. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：990 / 994

页数：5

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