A Low-Noise Transconductance Amplifier (LNTA) for Cryogenic Applications using CMOS Technology

被引:0
|
作者
Kamparaju, Gnanasekhar [1 ]
Bhatt, Darshak [1 ]
机构
[1] Indian Inst Technol Roorkee, Dept Elect & Commun Engn, Roorkee, Uttar Pradesh, India
关键词
D O I
10.1109/AUSTROCHIP56145.2022.9940686
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Quantum computing is the most prominent field in cryogenic applications. And they use room temperature classical electronic controllers for qubit read-out and control, which are bulky and complex, and limit the number of effective qubits to operate. There is a need for a higher level of integration and a large number of qubit operations, so the validation of CMOS technology at cryogenic temperature is required. This paper presents the study of device characteristics and design parameter variation of 180nm NMOS device. Also, the low noise transconductance amplifier is designed and simulated for noise performance at room temperature 300K and at cryogenic temperature 4K. The proposed design shows the noise figure of 53 dB and 0.272 dB at 300K and 4K, respectively. Also, it achieves the S21 of 14.4 dB and 17.4 dB at 300K and 4K, respectively with 11P3 of 19.64 dBm at 4K. This opens the scope for designing a CMOS qubit controller at cryogenic temperature in addition to the high level of integration.
引用
收藏
页码:61 / 64
页数:4
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