Two-Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface

被引：322

作者：

Chiappe, Daniele ^{[1
]}

Scalise, Emilio ^{[2
]}

Cinquanta, Eugenio ^{[1
]}

Grazianetti, Carlo ^{[1
,3
]}

van den Broek, Bas ^{[2
]}

Fanciulli, Marco ^{[1
,3
]}

Houssa, Michel ^{[2
]}

Molle, Alessandro ^{[1
]}

机构：

[1] CNR, Lab MDM, IMM, I-20864 Agrate Brianza, MB, Italy

[2] Univ Louvain, Dept Phys & Astron, Semicond Phys Lab, B-3001 Louvain, Belgium

[3] Univ Studi Milano Bicocca, Dipartimento Sci Mat, I-20126 Milan, MI, Italy

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 13期

关键词：

silicene; silicon; nanosheets; scanning tunnelling microscopy (STM); MoS2; DER-WAALS EPITAXY; SILICENE; LAYER; GROWTH; MECHANISM;

D O I：

10.1002/adma.201304783

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The structural and electronic properties of a Si nanosheet (NS) grown onto a MoS2 substrate by means of molecular beam epitaxy are assessed. Epitaxially grown Si is shown to adapt to the trigonal prismatic surface lattice of MoS2 by forming two-dimensional nanodomains. The Si layer structure is distinguished from the underlying MoS2 surface structure. The local electronic properties of the Si nanosheet are dictated by the atomistic arrangement of the layer and unlike the MoS2 hosting substrate they are qualified by a gap-less density of states. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2096 / 2101

页数：6

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