Electroreflectance spectroscopy of strained Si1-xGex layers on silicon

被引：0

作者：

Ebner, T ^{[1
]}

Thonke, K ^{[1
]}

Sauer, R ^{[1
]}

Schaffler, F ^{[1
]}

Herzog, HJ ^{[1
]}

机构：

[1] DAIMLER BENZ AG,FORSCHUNGSINST,D-89081 ULM,GERMANY

来源：

APPLIED SURFACE SCIENCE | 1996年 / 102卷

关键词：

D O I：

10.1016/0169-4332(96)00028-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electroreflectance spectroscopy was used to measure the direct transitions in strained Si1-xGex layers in the energy range from 3-6 eV. We were able to detect the transitions E(1), E(1) + Delta(1), E(0), E(0), E(0) + Delta(0), E(2)(X), E(2)(Sigma) and E(1)' for multiple samples with germanium concentrations from 12.5-28.1% for temperatures from 10-300 K. The transitions E(1) + Delta(1), E(0), E(0) + Delta(0), E(2)(Sigma) and E(1) were detected for the first time in attained Si1-xGex layers and it was also the first investigation of the temperature dependence of direct transitions id-strained Si1-xGex. Good agreement with theoretical calculations of strain shifts was found for the E(0) transition, while deviations occur for the E(1) transition.

引用

页码：90 / 93

页数：4

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