On optical gain mechanisms in a 2DEG photodetector

被引：5

作者：

Nabet, B ^{[1
]}

Romero, MA ^{[1
]}

Cola, A ^{[1
]}

Quaranta, F ^{[1
]}

Cesareo, M ^{[1
]}

机构：

[1] Drexel Univ, Philadelphia, PA 19104 USA

来源：

IMOC 2001: PROCEEDINGS OF THE 2001 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE: THE CHALLENGE OF THE NEW MILLENIUM: TECHNOLOGICAL DEVELOPMENT WITH ENVIRONMENTAL CONSCIOUSNESS | 2001年

关键词：

photodetectors; 2-DEG; photoconductor; responsivity; optical gain; photovoltaic effect; HEMT;

D O I：

10.1109/SBMOMO.2001.1008719

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss the gain mechanisms in an optical detector based on a modulation doped heterojunction. It is shown that, in this gate-less HEMT device, varying the density of the mobile electron gas produces large differences in optical responsivity. The observed behavior is explained on the basis of a internal variation of the Fermi level, similar to a photovoltaic gating effect.

引用

页码：57 / 60

页数：4

共 6 条

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