Resonance-enhanced electroresistance-magnetoresistance effects in multiferroic tunnel junctions

被引：5
|
作者：
Ma, Zhijun [1 ,2 ]
Zhou, Peng [1 ,2 ]
Zhang, Tianjin [1 ,2 ]
Liang, Kun [1 ,2 ]
Chu, Paul K. [3 ]
机构：
[1] Hubei Univ, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Wuhan 430062, Peoples R China
[2] Hubei Univ, Key Lab Green Preparat & Applicat Funct Mat, Minist Educ, Wuhan 430062, Peoples R China
[3] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
来源：
MATERIALS RESEARCH EXPRESS | 2015年 / 2卷 / 04期
基金：
中国国家自然科学基金;
关键词：
multiferroic tunnel junctions; electroresistance-magnetoresistance effects; resonant tunneling; FIELD;
D O I：
10.1088/2053-1591/2/4/046303
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electron transport of a multiferroic tunnel junction with a quantum well structure was investigated theoretically. Four distinct resistance states were obtained. Resonant tunneling that comes from the quantum well structure is believed to be responsible for the enhanced tunnel electroresistance-magnetroresistance effects. These results may evoke experimental interest in multiferroic tunnel junctions with a quantum well structure and help to put multi-state storage devices into practice.
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收藏
页数：6
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