Electrical properties of BaTiO3 thin film grown by the hydrothermal-electrochemical method

Crystalline BaTiO3 thin films were prepared directly on Ti substrates in aqueous solutions of Ba(OH)(2) at 150 degrees C by a hydrothermal-electrochemical method and their electrical properties for capacitors were measured. The leakage current-voltage characteristics exhibited rectifications, the degree of which depended on the top electrodes used. Resistivities as high as 10(12) Omega.cm were obtained in the voltage range up to 2V for the 0.40-mu m-thick BaTiO3 thin film and its breakdown voltage was higher than 12V, The grown films were paraelectric with dielectric constants of 340-350 and dielectric losses of 7-10% at 1 kHz, 0.1 V-rms, and 25 degrees C. The capacitance variation with de bias voltage from -2.5 to +2.5V was 9% of the zero-bias value, and that with temperature from -60 degrees to 130 degrees C was 24% of the room-temperature value.