Step-flow growth of Al droplet free AlN epilayers grown by plasma assisted molecular beam epitaxy

被引：7

作者：

Shao, Pengfei ^{[1
]}

Li, Siqi ^{[1
]}

Li, Zhenhua ^{[1
,2
]}

Zhou, Hui ^{[1
]}

Zhang, Dongqi ^{[1
]}

Tao, Tao ^{[1
]}

Yan, Yu ^{[1
]}

Xie, Zili ^{[1
]}

Wang, Ke ^{[1
,3
]}

Chen, Dunjun ^{[1
]}

Liu, Bin ^{[1
]}

Zheng, Youdou ^{[1
]}

Zhang, Rong ^{[1
,4
]}

Lin, Tsungtse ^{[3
]}

Wang, Li ^{[3
]}

Hirayama, Hideki ^{[3
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing, Peoples R China

[2] Zaozhuang Univ, Coll Optoelect Engn, Zaozhuang 277160, Peoples R China

[3] RIKEN, Saitama, Japan

[4] Xiamen Univ, Xiamen, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2022年 / 55卷 / 36期

基金：

国家重点研发计划;

关键词：

AlN; Al modulation epitaxy; Al droplet free; step flow; THIN-FILMS; SURFACE-MORPHOLOGY; GAN; BUFFER; LAYER;

D O I：

10.1088/1361-6463/ac79dd

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated an Al modulation epitaxy (AME) method to obtain step-flow growth of Al droplet free AlN layers by plasma assisted molecular beam epitaxy (MBE). At the usual growth temperature of (Al)GaN/AlN heterostructures, Al atom migration and desorption rate are very low and consequently it is very difficult to avoid the formation of Al droplets on AlN growth front by conventional MBE growth method. By adopting the AME growth method, such a difficulty has been effectively overcome and step flow growth mode of AlN has been clearly observed. By optimizing the AME growth time sequence, namely, AlN growth time and N radical beam treatment time, Al droplet free AlN layers with step flow growth characteristics have been obtained, with atomic flat surfaces and an average atomic step width of similar to 118 nm at 970 degrees C-1000 degrees C, which is still suitable to grow (Al)GaN/AlN heterostructures by MBE.

引用

页数：8

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