Electrical control of the exciton spin in nitride semiconductor quantum dots

被引：5

作者：

Senes, Mathieu ^{[1
]}

Lagarde, Delphine ^{[2
]}

Smith, Katherine L. ^{[1
]}

Balocchi, Andrea ^{[2
]}

Hooper, Stewart E. ^{[1
]}

Amand, Thierry ^{[2
]}

Heffernan, Jonathan ^{[1
]}

Marie, Xavier ^{[2
]}

机构：

[1] Sharp Labs Europe Ltd, Oxford OX4 4GB, England

[2] Univ Toulouse, LPCNO, CNRS, INSA,UPS, F-31077 Toulouse 4, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 22期

关键词：

excitons; gallium compounds; III-V semiconductors; indium compounds; semiconductor quantum dots; spin polarised transport; wide band gap semiconductors; RELAXATION; CONFINEMENT; WELLS; GAN;

D O I：

10.1063/1.3151823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the experimental evidence of the manipulation of the exciton spin in InGaN quantum dots through the application of an external electric field up to room temperature. Furthermore, we have found the exciton spin relaxation to be independent of temperature. These findings are highly promising for the potential future use of nitride semiconductor quantum dots in practical spintronic devices.

引用

页数：3

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