Low-noise waveguide SIS mixer with NbN/AlN/NbN tunnel junctions tuned by an NbN/MgO/NbTiN microstrip circuit

被引：4

作者：

Takeda, Masanori ^{[1
]}

Shan, Wenlei ^{[2
]}

Kojima, Takafumi ^{[3
,4
]}

Saito, Shingo ^{[1
]}

Kroug, Matthias ^{[4
]}

Uzawa, Yoshinori ^{[4
]}

Wang, Zhen ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol, Kobe Adv ICT Res Ctr, Nishi Ku, Kobe, Hyogo 6512492, Japan

[2] Chinese Acad Sci, Purple Mt Observ, Nanjing 210008, Jiangsu, Peoples R China

[3] Osaka Prefecture Univ, Dept Phys Sci, Osaka 5998531, Japan

[4] Natl Inst Nat Sci, Natl Astron Observ Japan, Mitaka, Tokyo 1818588, Japan

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2009年 / 22卷 / 07期

关键词：

INSULATOR-SUPERCONDUCTOR MIXERS; TUNING CIRCUITS; CURRENT DENSITY; TEMPERATURE; MILLIMETER; RECEIVER; FILMS;

D O I：

10.1088/0953-2048/22/7/075015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The low-noise performance of a waveguide SIS mixer with NbN/AlN/NbN tunnel junctions and an NbN/MgO/NbTiN tuning circuit on an MgO substrate was demonstrated at frequencies above the gap frequency of Nb. To design the mixer, the complex refractive index of the MgO substrate was measured by using a THz time-domain spectrometer. The superconductive properties of NbTiN films on MgO were examined in detail. An uncorrected receiver noise temperature of 262 K (DSB) at 820 GHz was achieved in an IF bandwidth of 4-12 GHz at a bath temperature of 4.2 K. By comparing the measured and calculated conversion gains, the loss in the NbN/MgO/NbTiN tuning circuit was estimated to be 0.98 dB at 810 GHz.

引用

页数：6

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