Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications

被引：49

作者：

Zhang, Zeyu ^{[1
]}

Jung, Daehwan ^{[2
,3
]}

Norman, Justin C. ^{[2
]}

Chow, Weng W. ^{[4
]}

Bowers, John E. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Korea Inst Sci & Technol, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea

[4] Sandia Natl Labs, Albuquerque, NM 87105 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2019年 / 25卷 / 06期

关键词：

Linewidth enhancement factor; quantum dot laser; feedback sensitivity; narrow linewidth; SEMICONDUCTOR-LASERS; OPTICAL FEEDBACK; REFRACTIVE-INDEX; WELL; GAIN; NOISE; MODULATION; REDUCTION; DYNAMICS; DIODES;

D O I：

10.1109/JSTQE.2019.2916884

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The linewidth enhancement factor (alpha(H)) is an important parameter for semiconductor lasers. In this paper, we investigate, both theoretically and experimentally, the key parameters that affect alpha(H) of InAs/GaAs quantum dot lasers. Both dot uniformity and doping density are found to be critical in achieving small alpha(H) in quantum dot lasers. The prospects for quantum dot lasers in isolator-free and narrow linewidth applications are also discussed.

引用

页数：9

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