Behavior of zirconium oxide films processed from novel monocyclopentadienyl precursors by atomic layer deposition

被引：18

作者：

Kukli, Kaupo ^{[1
,2
]}

Niinisto, Jaakko ^{[1
]}

Tamm, Aile ^{[2
]}

Ritala, Mikko ^{[1
]}

Leskela, Markku ^{[1
]}

机构：

[1] Univ Helsinki, Dept Chem, FI-00014 Helsinki, Finland

[2] Univ Tartu, Inst Phys, EE-51010 Tartu, Estonia

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 01期

关键词：

ZRO2; THIN-FILMS; HIGH-DIELECTRIC-CONSTANT; GATE DIELECTRICS; CYCLOPENTADIENYL PRECURSORS; STRAINED-SI; SILICON; RELIABILITY; CAPACITOR; EPITAXY; HFO2;

D O I：

10.1116/1.3071844

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZrO(2) thin films were grown by atomic layer deposition from new cyclopentadienyl precursors on planar TiN and SiO(2)/Si substrates, as well as on silicon having deep trenches with aspect ratio of 1:60. The films demonstrated conformal growth in trenches achieving step coverage of 80%-90%. ZrO(2) films crystallized either after exceeding threshold thickness or upon annealing dominantly in the cubic or tetragonal polymorph. Leakage current densities of (7-9) x 10(-8) A/cm(2) at capacitance equivalent oxide thicknesses of 0.76-0.82 nm were reached. (C) 2009 American Vacuum Society. [DOI:10.1116/1.3071844]

引用

收藏

页码：226 / 229

页数：4

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